Ion‐assisted Si/XeF2 etching: Temperature dependence in the range 100–1000 K
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Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000 K
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 1996
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.580205